THz integrated circuits using InP HEMT transistors

Over the last few years, operating frequencies of InP HEMT Transistors have pushed above 100 GHz (1 THz). This has allowed electronic circuitry to be realized at frequencies as high as 670 GHz. In particular, Low Noise Amplifiers (LNA), Power Amplifiers (PA), mixers and multipliers have all been imp...

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Bibliographic Details
Main Authors: Leong, K., Mei, G., Radisic, V., Sarkozy, S., Deal, W.
Format: Conference Proceeding
Language:English
Subjects:
Gain
HEMTs
Indium phosphide
Low Noise Amplifier
Noise
Noise figure
Power Amplifier
Receivers
Terahertz
Online Access:Request full text
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Summary:Over the last few years, operating frequencies of InP HEMT Transistors have pushed above 100 GHz (1 THz). This has allowed electronic circuitry to be realized at frequencies as high as 670 GHz. In particular, Low Noise Amplifiers (LNA), Power Amplifiers (PA), mixers and multipliers have all been implemented. A result of this has been integrated circuit receivers and transmitters operating to frequencies as high as 670 GHz.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2012.6403302