Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests

We report on the reliability of InP/GaAsSb/InP DHBTs dedicated to very high-speed ICs applications. The devices under tests were fabricated by OMMIC [1]. Accelerated aging tests under thermal stress were previously performed on the same technology and the results are detailed in [2]. In this paper,...

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Bibliographic Details
Main Authors: Kone, G. A., Maneux, C., Labat, N., Zimmer, T., Grandchamp, B., Frijlink, P., Maher, H.
Format: Conference Proceeding
Language:English
Subjects:
Accelerated aging
accelerated aging tests
Degradation
DHBTS
GaAsSb
Indium phosphide
InP
Junctions
life tests
reliability
Semiconductors
Stress
Temperature
type II heterojunction
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Summary:We report on the reliability of InP/GaAsSb/InP DHBTs dedicated to very high-speed ICs applications. The devices under tests were fabricated by OMMIC [1]. Accelerated aging tests under thermal stress were previously performed on the same technology and the results are detailed in [2]. In this paper, we present the accelerated aging tests under bias stress performed on 15 DHBTs up to 2000 hours. The collector current density was fixed at 400 kA/cm 2 with various collector-emitter voltages V CE (from 1.5 V to 2 V) and various base plate temperature T a (from 30°C to 120°C). The associated junction temperature range is 80-180°C. From the Gummel characteristic, we observe that the major degradation mechanism is the base current decrease for V BE
ISSN:1092-8669
DOI:10.1109/ICIPRM.2012.6403359