Total-ionizing-dose radiation response of 32 nm partially and 45 nm fully-depleted SOI devices

TID-induced changes in 32 nm PD SOI devices depend on the device variant: low V T devices show minor increased in leakage, high V T devices show negligible change. Simulated sensitivity of TID to the gate work function of the high-k metal gate and associated doping changes confirm that the body dopi...

Full description

Saved in:
Bibliographic Details
Main Authors: Rezzak, N., Zhang, E. X., Ball, D. R., Alles, M. L., Loveless, T. D., Schrimpf, R. D., Rodbell, K. P.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Doping profiles
Logic gates
Metals
Semiconductor process modeling
Sensitivity
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:TID-induced changes in 32 nm PD SOI devices depend on the device variant: low V T devices show minor increased in leakage, high V T devices show negligible change. Simulated sensitivity of TID to the gate work function of the high-k metal gate and associated doping changes confirm that the body doping remains high and generally mitigates TID sensitivity. Preliminary ring oscillator measurements show no measurable change in supply current or frequency with TID. Specially designed experimental 45 nm SOI FDSOI devices exhibit a pronounced TID-induced V T shift due to the coupling with the BOX layer.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2012.6404374