Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

In this paper, we research on fin thickness (T fin ) and fin height (H fin ) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with T fin and fin H fin . This makes threshold voltage (V th ) vary. Thus, T fin and H fi...

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Bibliographic Details
Main Authors: Junha Lee, Hanwool Jeong, Younghwi Yang, Jisu Kim, Seong-Ook Jung
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Fin height
Fin thickness
FinFET
FinFETs
Logic gates
SRAM
Stability analysis
Stabillity
Tri-gate
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Summary:In this paper, we research on fin thickness (T fin ) and fin height (H fin ) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with T fin and fin H fin . This makes threshold voltage (V th ) vary. Thus, T fin and H fin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since V th variation is a dominant factor determining them. If T fin increases, the mean of RSNM (μ RSNM ) and the mean of WWTV (μ WWTV ) decreases and increases, respectively, while the standard deviation of RSNM (σ RSNM ) and WWTV (σ WWTV ) are almost not changed. If H fin increases, the μ RSNM and μ WWTV decreases and increases, respectively, while both σ RSNM and σ WWTV decrease. However, for a sufficiently small T fin , the effect of H fin on μ RSNM and μ WWTV becomes negligible.
DOI:10.1109/ISOCC.2012.6406900