17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier

High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in a master-oscillator power amplifier-system. We compare the influence of lateral geometric design on amplifier performance, by using devices with super large optical wav...

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Bibliographic Details
Published in:IEEE photonics technology letters 2013-01, Vol.25 (2), p.115-118
Main Authors: Xiaozhuo Wang, Erbert, G., Wenzel, H., Crump, P., Eppich, B., Knigge, S., Ressel, P., Ginolas, A., Maassdorf, A., Trankle, G.
Format: Article
Language:English
Subjects:
High power
Laser beams
lateral structure
Measurement by laser beam
near-diffraction-limited beam quality
Optical diffraction
Optical pulses
Power generation
Semiconductor lasers
semiconductor optical amplifier
Ultrafast optics
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Summary:High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in a master-oscillator power amplifier-system. We compare the influence of lateral geometric design on amplifier performance, by using devices with super large optical waveguide (4.8 μm) and relative low confinement factor (Γ = 1%) . We find that the use of an amplifier with a larger active region results in both high power and high beam quality. An abandonment of cavity spoiling grooves leads to strongly improved beam characteristics.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2228185