A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory

ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous...

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Bibliographic Details
Published in:IEEE electron device letters 2013-02, Vol.34 (2), p.238-240
Main Authors: SEO, Yujeong, MIN YEONG SONG, AN, Ho-Myoung, TAE GEUN KIM
Format: Article
Language:English
Subjects:
Applied sciences
Charge carrier processes
Charge-trap Flash (CTF)
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic gates
ReCTF
resistive random-access memory (ReRAM)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
silicon/oxide/nitride/oxide/silicon (SONOS)
Switches
Voltage measurement
Zinc oxide
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Description
Summary:ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (10 6 P/E cycles), along with comparable retention properties.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2235059