3D monolithic integrated thermoelectric IR sensor

In this paper, we demonstrate a 3D monolithic integrated thermoelectric IR sensor by using CMOS-MEMS technology. Since CMOS technology is a plane process, wafer-level packaging is used to further improve the system integration density. Both the circuit interface and IR filter are integrated in the t...

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Bibliographic Details
Main Authors: Dehui Xu, Bin Xiong, Guoqiang Wu, Yinglei Ma, Errong Jing, Yueling Wang
Format: Conference Proceeding
Language:English
Subjects:
Bonding
CMOS integrated circuits
Microstructure
Optical filters
Silicon
Temperature sensors
Online Access:Request full text
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Summary:In this paper, we demonstrate a 3D monolithic integrated thermoelectric IR sensor by using CMOS-MEMS technology. Since CMOS technology is a plane process, wafer-level packaging is used to further improve the system integration density. Both the circuit interface and IR filter are integrated in the thermoelectric IR sensor. In the vertical direction, IR filter is integrated with IR sensor to miniaturize the IR system by wafer-level Au-Si bonding, as well as improve sensor performance by the vacuum bonding. In the plane direction, the thermopile microstructure was fabricated by standard CMOS process and released by XeF 2 Post-CMOS technology. Thus, the sensor merges benefits of CMOS technology with the advantage of on chip signal processing.
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2012.6411203