Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes

The breakdown location within a planar InP/In/sub 0.53/Ga/sub 0.47/As (InGaAs) separate absorption, grading, charge sheet, and multiplication (SAGCM) avalanche photodiode (APD), using the standoff breakdown suppression design to replace guard rings, depends on the two-dimensional (2-D) geometry of t...

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Bibliographic Details
Published in:Journal of lightwave technology 1997-11, Vol.15 (11), p.2137-2140
Main Authors: Haralson, J.N., Parks, J.W., Brennan, K.F., Clark, W., Tarof, L.E.
Format: Article
Language:English
Subjects:
Absorption
Applied sciences
Avalanche breakdown
Avalanche photodiodes
Electric breakdown
Electronics
Etching
Exact sciences and technology
Geometry
Indium gallium arsenide
Indium phosphide
Numerical simulation
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Two dimensional displays
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Summary:The breakdown location within a planar InP/In/sub 0.53/Ga/sub 0.47/As (InGaAs) separate absorption, grading, charge sheet, and multiplication (SAGCM) avalanche photodiode (APD), using the standoff breakdown suppression design to replace guard rings, depends on the two-dimensional (2-D) geometry of the Zn diffused well. Since the geometry of this p/sup +/ diffusion is dependent upon the surface etch, the effects of varying the etch depth (t/sub standoff/) and length of the sloped etch edge (w/sub slope/) are studied using a two-dimensional drift-diffusion simulator. It is determined that the etch depth brackets a region where center breakdown dominance is possible. To ensure center breakdown within this region it is concluded that there is a maximum value that the slope of the etch walls must not exceed.
ISSN:0733-8724
1558-2213
DOI:10.1109/50.641534