A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology

A 3.3-V 16-Mb nonvolatile memory having operation virtually identical to DRAM with package pin compatibility has been developed. Read and write operations are fully DRAM compatible except for a longer RAS precharge time after write. Fast random access time of 63 ns with the NAND flash memory cell is...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1997-11, Vol.32 (11), p.1748-1757
Main Authors: Tae-Sung Jung, Do-Chan Choi, Sung-Hee Cho, Myong-Jae Kim, Seung-Keun Lee, Byung-Soon Choi, Jin-Sun Yum, San-Hong Kim, Dong-Gi Lee, Jong-Chang Son, Myung-Sik Yong, Heung-Kwun Oh, Sung-Bu Jun, Woung-Moo Lee, Haq, E., Kang-Deog Suh, Ali, S.B., Hyung-Kyu Lim
Format: Article
Language:English
Subjects:
Application software
CMOS process
Consumer electronics
Decoding
Flash memory
Flash memory cells
Nonvolatile memory
Packaging
Power supplies
Random access memory
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Summary:A 3.3-V 16-Mb nonvolatile memory having operation virtually identical to DRAM with package pin compatibility has been developed. Read and write operations are fully DRAM compatible except for a longer RAS precharge time after write. Fast random access time of 63 ns with the NAND flash memory cell is achieved by using a hierarchical row decoder scheme and a unique folded bit-line architecture which also allows bit-by-bit program verify and inhibit operation. Fast page mode with a column address access time of 21 ns is achieved by sensing and latching 4 k cells simultaneously. To allow byte alterability, nonvolatile restore operation with self-contained erase is developed. Self-contained erase is word-line based, and increased cell disturb due to the word-line based erase is relaxed by adding a boosted bit-line scheme to a conventional self-boosting technique. The device is fabricated in a 0.5-/spl mu/m triple-well, p-substrate CMOS process using two-metal and three-poly interconnect layers. A resulting die size is 86.6 mm/sup 2/, and the effective cell size including the overhead of string select transistors is 2.0 /spl mu/m/sup 2/.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.641697