Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control

We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO 2 /GaN substrates. The band e...

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Bibliographic Details
Main Authors: Trellenkamp, S., Mikulics, M., Winden, A., Adam, R., Moers, J., Marso, M., Grutzmacher, D., Hardtdegen, H.
Format: Conference Proceeding
Language:English
Subjects:
Apertures
Fabrication
Nanoscale devices
Photodetectors
Photonic band gap
Sensitivity
Strain
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Summary:We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO 2 /GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.
DOI:10.1109/ASDAM.2012.6418527