The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties

An in-situ deposited AlO x layer has a great influence on the transistor properties. We recently published a comparison between an AlGaAs/InGaAs/GaAs HFET (without any passivation) and a passivated MOSHFET (AlO x /AlGaAs/InGaAs/GaAs. This paper reports on properties of AlGaAs/GaAs transistors with a...

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Bibliographic Details
Main Authors: Gregusova, D., Kudela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordos, P.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
HEMTs
Indium gallium arsenide
Logic gates
MODFETs
Nitrogen
Oxidation
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Summary:An in-situ deposited AlO x layer has a great influence on the transistor properties. We recently published a comparison between an AlGaAs/InGaAs/GaAs HFET (without any passivation) and a passivated MOSHFET (AlO x /AlGaAs/InGaAs/GaAs. This paper reports on properties of AlGaAs/GaAs transistors with an InGaAs channel passivated with an in-situ deposited AlO x layer. Also, the effectiveness of the passivation is discussed. The influence of an thin AlO x layer on properties of passivated HFET in comparison to the passivated MOSHFET and the unpassivated HFET was studied. The understanding of the functionality of the in-situ deposited layer in the passivation or modification of surface trapping states will contribute to the knowledge of GaAs surface potential control.
DOI:10.1109/ASDAM.2012.6418545