Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the pr...

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Bibliographic Details
Main Authors: Cheng-Ta Yu, Chih-Chun Shen, Han-Chieh Ho, Hong-Yeh Chang, Jia-Shiang Fu, Heng-Kuang Lin
Format: Conference Proceeding
Language:English
Subjects:
antimonide-based compound semiconductor (ABCS)
HEMTs
high electron-mobility transistor (HEMT)
Insertion loss
Loss measurement
MMICs
monolithic microwave integrated circuit (MMIC)
Ports (Computers)
Semiconductor device measurement
switch
Switches
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Summary:In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P 1dB ) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm 2 . These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2012.6421544