A 94-GHz 0.35-W power amplifier module

This paper presents a 94-GHz power amplifier (PA) module. This module contains three identical monolithic microwave integrated circuit (MMIC) PA chips and demonstrates 0.35-W output power at the waveguide output port with a miniature size. The MMIC PA is a two-stage monolithic W-band PA using 0.1-/s...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1997-12, Vol.45 (12), p.2418-2423
Main Authors: Pin-Pin Huang, Tian-Wei Huang, Wang, Huei, Lin, E.W., Yonghui Shu, Dow, G.S., Lai, R., Biedenbender, M., Elliott, J.H.
Format: Article
Language:English
Subjects:
Gallium arsenide
HEMTs
Indium gallium arsenide
Microwave integrated circuits
MMICs
MODFETs
Monolithic integrated circuits
Power amplifiers
Power generation
Power measurement
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Summary:This paper presents a 94-GHz power amplifier (PA) module. This module contains three identical monolithic microwave integrated circuit (MMIC) PA chips and demonstrates 0.35-W output power at the waveguide output port with a miniature size. The MMIC PA is a two-stage monolithic W-band PA using 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power high electron mobility transistor (HEMT) process. This MMIC PA exhibits a measured linear gain of 8 dB and a maximum output power of 300 mW with 10.5% peak power-added efficiency (PAE) at 94 GHz. To our knowledge, both the 300-mW output power MMIC PA and the 0.35-W PA module represent the highest output power amplification component performance at this frequency.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.643854