The effect of body contact series resistance on SOI CMOS amplifier stages

This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-/spl mu/m SOI process indicate body-tie series resistances increasing i...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-12, Vol.44 (12), p.2290-2294
Main Authors: Edwards, C.F., Redman-White, W., Tenbroek, B.M., Lee, M.S.L., Uren, M.J.
Format: Article
Language:English
Subjects:
Circuit simulation
Contact resistance
Coupling circuits
Degradation
Delay effects
Digital signal processing
Electrical resistance measurement
Immune system
Impact ionization
Integrated circuit modeling
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Summary:This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-/spl mu/m SOI process indicate body-tie series resistances increasing into the M/spl Omega/ region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteristics as the body-tie resistance enters the M/spl Omega/ region. It is deduced that imperfectly body tied devices may be worse for analogue design than using no body-tie at all.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.644655