Optical response of Si/Ge superlattices with embedded Ge dots

A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having ; crystallog...

Full description

Saved in:
Bibliographic Details
Main Authors: Kalem, S., Arthursson, O., Werner, P.
Format: Conference Proceeding
Language:English
Subjects:
electronic band structure
Energy measurement
germanium dots
Integrated optics
interdiffusion model
Optical imaging
Optical superlattices
Optical variables measurement
Silicon
Silicon-germanium superlattices
spectroscopic ellipsometry
Thickness measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having ; crystallographic orientation. The results of the SE analysis between 1.2 eV and 5.2 eV indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si 1-x Ge x intermixing layers. The optical transitions exhibit Si, Ge and alloying related critical points.
DOI:10.1109/PGC.2012.6458128