A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications

This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band...

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Bibliographic Details
Main Authors: Jardel, O., Olivier, M., Lancereau, D., Aubry, R., Chartier, E., Sarazin, N., Di Forte Poisson, M., Piotrowicz, S., Stanislawiak, M., Rimbert, D., Delage, S. L., Eudeline, P.
Format: Conference Proceeding
Language:English
Subjects:
Amplifier
Gain
Gallium nitride
GaN HEMT
MMICs
Power amplifiers
pulse to pulse stability
S-Band
Stability analysis
Thermal stability
Transistors
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Summary:This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
DOI:10.23919/EuMC.2012.6459166