One-step formation of atomic-layered transistor by selective fluorination of graphene film

In this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF 4 plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (

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Bibliographic Details
Main Authors: Ho, Kuan-I, Liao, Jia-Hong, Huang, Chi-Hsien, Hsu, Chang-Lung, Li, Lain-Jong, Lai, Chao-Sung, Su, Ching-Yuan
Format: Conference Proceeding
Language:English
Subjects:
CF 4 plasma and Transistor
Conferences
Electronics
Fluorination
Formations
Graphene
Meters
Nanoelectronics
Semiconductor devices
Transistors
Online Access:Request full text
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Description
Summary:In this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF 4 plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (
ISSN:2159-3523
2159-3531
DOI:10.1109/INEC.2013.6466037