Hump phenomenon in transfer characteristics of double-gated thin-body Tunneling Field-Effect Transistor (TFET) with gate/source overlap

Most of research groups have studied on Tunneling Field-Effect Transistors (TFETs) with assumption that there are no gate/source overlap and abrupt source/channel junction. In this work, we study the electrical characteristics of double-gated thin-body TFET with gate/source overlap and no abrupt sou...

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Bibliographic Details
Main Authors: Woo Kim, Hyun, Sun, Min-Chul, Wan Kim, Sang, Park, Byung-Gook
Format: Conference Proceeding
Language:English
Subjects:
band-to-band tunneling
Channels
Conferences
Electrical junctions
Field effect transistors
Gates
hump characteristics
Nanoelectronics
Semiconductor devices
TFET
Tunneling
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Summary:Most of research groups have studied on Tunneling Field-Effect Transistors (TFETs) with assumption that there are no gate/source overlap and abrupt source/channel junction. In this work, we study the electrical characteristics of double-gated thin-body TFET with gate/source overlap and no abrupt source/channel junction. From transfer characteristics, hump phenomenon occurring with increasing gate bias is observed. This phenomenon affects the threshold voltage (V TH ), which worsens device matching and also makes it difficult to design logic circuits. The reason why tunneling current is suddenly increased is due to tunneling components in a direction normal to the channel. Theses hump phenomena are not seen in the previous TFET study using unidirectional nonlocal band-to-band tunneling model.
ISSN:2159-3523
2159-3523
DOI:10.1109/INEC.2013.6466048