Fabrication of silicon highly-rich SiOx(x<0.75) and its novel resistive switching behaviors

The unipolar resistive switching characteristics are investigated in silicon highly-rich SiO x (x

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Bibliographic Details
Main Authors: Yue-Fei Wang, Xin-Ye Qian, Kun-Ji Chen, Zhong-Hui Fang, Wei Li, Jun Xu
Format: Conference Proceeding
Language:English
Subjects:
Electrodes
Random access memory
Resistance
Silicon
Switches
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Description
Summary:The unipolar resistive switching characteristics are investigated in silicon highly-rich SiO x (x
DOI:10.1109/ICSICT.2012.6467606