The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications

In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V h...

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Bibliographic Details
Main Authors: Chyuan-Haur Kao, Chih-Ju Lin, Hsin-Yuan Wang, Szu-Chien Chen
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Charge carrier processes
Nitrogen
Rough surfaces
Surface roughness
Zirconium
Online Access:Request full text
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Summary:In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
DOI:10.1109/ICSICT.2012.6467750