The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications

In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V h...

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Main Authors: Chyuan-Haur Kao, Chih-Ju Lin, Hsin-Yuan Wang, Szu-Chien Chen
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Charge carrier processes
Nitrogen
Rough surfaces
Surface roughness
Zirconium
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Chih-Ju Lin
Hsin-Yuan Wang
Szu-Chien Chen
description In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
doi_str_mv 10.1109/ICSICT.2012.6467750
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6467750</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6467750</ieee_id><sourcerecordid>6467750</sourcerecordid><originalsourceid>FETCH-ieee_primary_64677503</originalsourceid><addsrcrecordid>eNp9j01PwzAMhoPQJD7WX7CL_wDFaUuznSsQO3GgJy5TiLwuKI0rJ0Lqv6dM48rJft7Xz8FKbTSWWuPucd-977u-rFBXZdu0xjzhlbrTy1ZXjanba1XszPaPm-2NKlL6QsTFNljjreL-ROBOVqzLJD5l7xLwET7krTrnA0EWO00-DhDsTJLgc4bos_BAEXx0LBOLzZ5_CSLHbw4LBoKRRpYZFjt4d75Ia7U62pCouMx7tXl57rvXB09Eh0n8aGU-XH6p_29_ALy4Trg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chyuan-Haur Kao ; Chih-Ju Lin ; Hsin-Yuan Wang ; Szu-Chien Chen</creator><creatorcontrib>Chyuan-Haur Kao ; Chih-Ju Lin ; Hsin-Yuan Wang ; Szu-Chien Chen</creatorcontrib><description>In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.</description><identifier>ISBN: 9781467324748</identifier><identifier>ISBN: 1467324744</identifier><identifier>EISBN: 1467324736</identifier><identifier>EISBN: 9781467324731</identifier><identifier>EISBN: 1467324752</identifier><identifier>EISBN: 9781467324755</identifier><identifier>DOI: 10.1109/ICSICT.2012.6467750</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Charge carrier processes ; Nitrogen ; Rough surfaces ; Surface roughness ; Zirconium</subject><ispartof>2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012, p.1-3</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6467750$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6467750$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chyuan-Haur Kao</creatorcontrib><creatorcontrib>Chih-Ju Lin</creatorcontrib><creatorcontrib>Hsin-Yuan Wang</creatorcontrib><creatorcontrib>Szu-Chien Chen</creatorcontrib><title>The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications</title><title>2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology</title><addtitle>ICSICT</addtitle><description>In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.</description><subject>Annealing</subject><subject>Charge carrier processes</subject><subject>Nitrogen</subject><subject>Rough surfaces</subject><subject>Surface roughness</subject><subject>Zirconium</subject><isbn>9781467324748</isbn><isbn>1467324744</isbn><isbn>1467324736</isbn><isbn>9781467324731</isbn><isbn>1467324752</isbn><isbn>9781467324755</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9j01PwzAMhoPQJD7WX7CL_wDFaUuznSsQO3GgJy5TiLwuKI0rJ0Lqv6dM48rJft7Xz8FKbTSWWuPucd-977u-rFBXZdu0xjzhlbrTy1ZXjanba1XszPaPm-2NKlL6QsTFNljjreL-ROBOVqzLJD5l7xLwET7krTrnA0EWO00-DhDsTJLgc4bos_BAEXx0LBOLzZ5_CSLHbw4LBoKRRpYZFjt4d75Ia7U62pCouMx7tXl57rvXB09Eh0n8aGU-XH6p_29_ALy4Trg</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Chyuan-Haur Kao</creator><creator>Chih-Ju Lin</creator><creator>Hsin-Yuan Wang</creator><creator>Szu-Chien Chen</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201210</creationdate><title>The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications</title><author>Chyuan-Haur Kao ; Chih-Ju Lin ; Hsin-Yuan Wang ; Szu-Chien Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_64677503</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Annealing</topic><topic>Charge carrier processes</topic><topic>Nitrogen</topic><topic>Rough surfaces</topic><topic>Surface roughness</topic><topic>Zirconium</topic><toplevel>online_resources</toplevel><creatorcontrib>Chyuan-Haur Kao</creatorcontrib><creatorcontrib>Chih-Ju Lin</creatorcontrib><creatorcontrib>Hsin-Yuan Wang</creatorcontrib><creatorcontrib>Szu-Chien Chen</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chyuan-Haur Kao</au><au>Chih-Ju Lin</au><au>Hsin-Yuan Wang</au><au>Szu-Chien Chen</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications</atitle><btitle>2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology</btitle><stitle>ICSICT</stitle><date>2012-10</date><risdate>2012</risdate><spage>1</spage><epage>3</epage><pages>1-3</pages><isbn>9781467324748</isbn><isbn>1467324744</isbn><eisbn>1467324736</eisbn><eisbn>9781467324731</eisbn><eisbn>1467324752</eisbn><eisbn>9781467324755</eisbn><abstract>In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2012.6467750</doi></addata></record>
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subjects Annealing
Charge carrier processes
Nitrogen
Rough surfaces
Surface roughness
Zirconium
title The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T12%3A45%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20characteristics%20of%20ZrO2%20charge%20trapping%20layers%20by%20nitrogen%20incorporation%20in%20nonvolatile%20memory%20applications&rft.btitle=2012%20IEEE%2011th%20International%20Conference%20on%20Solid-State%20and%20Integrated%20Circuit%20Technology&rft.au=Chyuan-Haur%20Kao&rft.date=2012-10&rft.spage=1&rft.epage=3&rft.pages=1-3&rft.isbn=9781467324748&rft.isbn_list=1467324744&rft_id=info:doi/10.1109/ICSICT.2012.6467750&rft.eisbn=1467324736&rft.eisbn_list=9781467324731&rft.eisbn_list=1467324752&rft.eisbn_list=9781467324755&rft_dat=%3Cieee_6IE%3E6467750%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-ieee_primary_64677503%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6467750&rfr_iscdi=true