Electrical and physical characteristics of the high-k Ti-doped Ce2O3 (Ce2Ti2O7) dielectrics combined with rapid thermal annealing

In this paper, electrical and physical characteristics of the addition of Ti into Ce 2 O 3 dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce 2 Ti 2 O 7 gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smal...

Full description

Saved in:
Bibliographic Details
Main Authors: Chyuan-Haur Kao, Chien-Jung Liao, Lien-Tai Kuo, Che-Chun Liu
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Dielectrics
High K dielectric materials
Logic gates
Silicon
Stress
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, electrical and physical characteristics of the addition of Ti into Ce 2 O 3 dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce 2 Ti 2 O 7 gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate voltage shift, higher breakdown electric field and smaller charge trapping rate.
DOI:10.1109/ICSICT.2012.6467831