First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that the dilute-As GaNAs alloy exhibits the direct band gap properties. The dilute-As GaNAs alloy shows a band gap range f...

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Bibliographic Details
Published in:Journal of display technology 2013-04, Vol.9 (4), p.272-279
Main Authors: Chee-Keong Tan, Jing Zhang, Xiao-Hang Li, Guangyu Liu, Tayo, B. O., Tansu, N.
Format: Article
Language:English
Subjects:
Auger recombination
band parameters
band structure
dilute-As GaNAs
Discrete Fourier transforms
Effective mass
First-Principle
Gallium nitride
Impurities
lasers
Light emitting diodes
Photonic band gap
Solid state lighting
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Summary:The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that the dilute-As GaNAs alloy exhibits the direct band gap properties. The dilute-As GaNAs alloy shows a band gap range from 3.645 eV down to 2.232 eV with As content varying from 0% to 12.5%, which covers the blue and green spectral regime. This finding indicates the alloy as a potential candidate for photonic devices applications. The bowing parameter of 14.5 eV ±0.5 eV is also obtained using line fitting with the First-Principle and experimental data. The effective masses for electrons and holes in dilute-As GaNAs alloy, as well as the split-off energy parameters, were also presented. Minimal interband Auger recombination is also suggested for the dilute-As GaNAs alloy attributing to the off-resonance condition for this process.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2013.2248342