Piezoresistive cantilever probes for simultaneous nanoscale topography and conductivity imaging

In this paper, we present the design and fabrication of piezoresistive Microwave Impedance Microscopy (MIM) cantilever probes integrated with low impedance, electrically-shielded sharp tips to enable simultaneous topographical and electrical scanning probe microscopy. The fabricated probes show a pi...

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Bibliographic Details
Main Authors: Yongliang Yang, Yue Ma, Haemmerli, A., Keji Lai, Kundhikanjana, W., Harjee, N., Pruitt, B., Xinxin Li, Kelly, M., Zhi-Xun Shen
Format: Conference Proceeding
Language:English
Subjects:
Conductors
Conductors (devices)
Conferences
Imaging
Impedance
Mechanical systems
Microwave imaging
Microwaves
Noise
Piezoresistance
Probes
Shields
Surfaces
Topography
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Summary:In this paper, we present the design and fabrication of piezoresistive Microwave Impedance Microscopy (MIM) cantilever probes integrated with low impedance, electrically-shielded sharp tips to enable simultaneous topographical and electrical scanning probe microscopy. The fabricated probes show a piezoresistive resolution of 2 nm in 1 Hz to 10 kHz bandwidth, which ensures high quality topographic sensing. The resistance of the center conductor is measured less than 5 Ω and the capacitance between the conductor and shield is 1.7 pF. These parameters are critical for high sensitivity MIM imaging. Piezoresistive topography and MIM images are simultaneously obtained with the fabricated probes at room temperature and cryogenic temperature. These new piezoresistive probes improve MIM capabilities and therefore broaden MIM application in scientific and engineering areas.
ISSN:1084-6999
DOI:10.1109/MEMSYS.2013.6474243