Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Hall measurements have been carried out for the Ge p-and n-MOSFETs with different substrate orientations and GeO x /Ge interface qualities. It is found that the significant reduction of effective mobility in high surface carrier concentration (N s ) or high normal field in Ge MOSFETs is attributed p...

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Bibliographic Details
Main Authors: Rui Zhang, Po-Chin Huang, Ju-Chin Lin, Takenaka, M., Takagi, S.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Capacitance-voltage characteristics
Hall effect
MOSFET circuits
MOSFETs
Oxidation
Plasma temperature
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Summary:Hall measurements have been carried out for the Ge p-and n-MOSFETs with different substrate orientations and GeO x /Ge interface qualities. It is found that the significant reduction of effective mobility in high surface carrier concentration (N s ) or high normal field in Ge MOSFETs is attributed partly to the N s loss due to large amounts of interface states inside the valence and conduction bands of Ge. The GeO x /Ge interface roughness is another reason limiting the high N s mobility. It has been revealed that room temperature plasma post oxidation can realize Al 2 O 3 /GeO x /Ge gate stacks with atomically-flat GeO x /Ge interfaces. Ge MOSFETs with these interfaces have provided record high effective hole and electron mobility, which overcome the Si universal mobility in both low and high N s regions.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6479051