Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks

S/D epitaxy remains an effective source of strain engineering for both aggressively and conservatively scaled FinFETs. Not merging the S/D epitaxy between adjacent fins and recess etch into the fin before S/D epitaxy is recommended for maximizing the gain. With high active P concentration Si:C becom...

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Bibliographic Details
Main Authors: Nainani, A., Gupta, S., Moroz, V., Munkang Choi, Yihwan Kim, Cho, Y., Gelatos, J., Mandekar, T., Brand, A., Er-Xuan Ping, Abraham, M. C., Schuegraf, K.
Format: Conference Proceeding
Language:English
Subjects:
FinFETs
Logic gates
Silicon carbide
Stress
Tin
Online Access:Request full text
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Summary:S/D epitaxy remains an effective source of strain engineering for both aggressively and conservatively scaled FinFETs. Not merging the S/D epitaxy between adjacent fins and recess etch into the fin before S/D epitaxy is recommended for maximizing the gain. With high active P concentration Si:C becomes an effective stressor for NMOS. Contact and gate metal fills provide new knobs for engineering strain in FinFET devices for the 22nm node and remain effective with conservative scaling of contact / gate CD only.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6479065