Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

• Main Authors: Lee, Y., Chuang, S., Liu, C., Hsueh, F., Sung, P., Chen, H., Wu, C., Lin, K., Yao, J., Shen, Y., Kuo, M., Yang, C., Luo, G., Lai, C., Current, M. I., Wan, Y., Tseng, T., Hu, C., Yang, F.
• Format: Conference Proceeding
• Language: English
• Subjects: Annealing; Junctions; Leakage current; Logic gates; MOSFET circuits; Nickel; Temperature measurement
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.2012.6479087

For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 o C. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffusion-less junction: for easily diffused n-type dopant, phosphorous (P), the ion implantation dopant profile after the MWA activation process remains unchanged. (2) Increased C ox and lower gate leakage: the low temperature activation process leads to less Ge out-diffusion during MWA than RTA, suppressing the degradation of gate dielectric/ Ge channel interface. (3) Ultrathin 7.5nm Ni mono-germanide with low sheet resistance (Rs) and contact resistivity: after two-step MWA, a thin mono-NiGe layer was obtained which has larger crystallite size to lower Rs. Ge n- and p-MOSFET were also demonstrated. Compared to conventional RTA, the MWA gives 50% and 24% drive current enhancement for p- and n-MOSFET, respectively. These data show that the low temperature MWA is a very promising thermal process technology for Ge CMOS manufacturing.