Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM

In this work, for the first time at our knowledge, the improvement of chalcogenide-based CBRAM performance and reliability by Sb doping of the GeS 2 electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model an...

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Main Authors: Vianello, E., Molas, G., Longnos, F., Blaise, P., Souchier, E., Cagli, C., Palma, G., Guy, J., Bernard, M., Reyboz, M., Rodriguez, G., Roule, A., Carabasse, C., Delaye, V., Jousseaume, V., Maitrejean, S., Reimbold, G., De Salvo, B., Dahmani, F., Verrier, P., Bretegnier, D., Liebault, J.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Atomic measurements
Doping
Programming
Resistance
Soldering
Thermal stability
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Summary:In this work, for the first time at our knowledge, the improvement of chalcogenide-based CBRAM performance and reliability by Sb doping of the GeS 2 electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model and first principle calculations, is shown. We argue that optimized ~10% Sb doping in the GeS 2 electrolyte allows to achieve SET speed of 30ns at 2.2V (i.e. 0.66pJ SET programming power), while assuring 10 years data retention at 125°C, >10 5 cycling and high robustness to Sn-Pb soldering profile. Finally, the improved thermal stability of the filament in the GeS 2 -Sb matrix is clearly elucidated by means of molecular dynamics calculations.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6479145