Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire

In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is ca...

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Bibliographic Details
Main Authors: Salimath, A. K., Chishti, S. S., Verma, A., Bishnoi, B., Ghosh, B.
Format: Conference Proceeding
Language:English
Subjects:
Computer simulation
Confinement
Cross sections
Evolution
Ge Nanowire
Germanium
Impurities
Monte Carlo method
Monte Carlo methods
Nanowires
Phonons
Rough surfaces
Scattering
Spin relaxation lengths
Spintronics
Surface roughness
Transport
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Summary:In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D'yakonov-Perel' relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm 2 and 10×10 nm 2 .
ISSN:2163-4971
2643-1300
DOI:10.1109/CDE.2013.6481375