A 1.8V wide-band LNA design in 0.18-µm triple-well CMOS

In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to s...

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Bibliographic Details
Main Authors: Hyeonseok Hwang, Chan-Hui Jeong, Chankeun Kwon, Hoonki Kim, Youngmok Jeong, Bumsoo Lee, Soo-Won Kim
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
CMOS
CMOS integrated circuits
Deep N-well
Digital video broadcasting
Gain
LNA
MOS devices
Receivers
Threshold voltage
Triple-well
Online Access:Request full text
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Summary:In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-μm triple-well CMOS technology.
DOI:10.1109/EDSSC.2012.6482831