Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-to-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and...

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Bibliographic Details
Main Authors: Onodera, H., Horio, K.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
breakdown voltage
buffer leakage current
Electric breakdown
Electric fields
field plate
Gallium nitride
GaN
HEMT
HEMTs
impact ionization of carriers
Logic gates
MODFETs
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Summary:We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-to-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.