Investigations on an Ultra-Thin Bendable Monolithic Si CMOS Image Sensor

In this paper, theoretical as well as experimental results of the investigations on a bendable ultrathin Si monolithic CMOS image sensor are presented. The electro-optical behavior of a thinned flexible CMOS active pixel sensor for the application of uniaxial mechanical stress is theoretically and e...

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Bibliographic Details
Published in:IEEE sensors journal 2013-10, Vol.13 (10), p.3892-3900
Main Authors: Dogiamis, Georgios C., Hosticka, Bedrich J., Grabmaier, Anton
Format: Article
Language:English
Subjects:
Flexible CMOS image sensor
Image sensors
mechanical stress
MOSFET
Optical sensors
Photodiodes
Silicon
Stress
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Summary:In this paper, theoretical as well as experimental results of the investigations on a bendable ultrathin Si monolithic CMOS image sensor are presented. The electro-optical behavior of a thinned flexible CMOS active pixel sensor for the application of uniaxial mechanical stress is theoretically and experimentally analyzed. The necessity of a correlated double sampling readout scheme to achieve a stress-independent operation is underlined. Optical as well as electrical characteristics of standard photodiodes on ultrathin silicon chips embedded into a polyimide foil under several bending configurations are discussed and experimental data are presented. Moreover, design rules for the stress-independent operation of a flexible ultrathin image sensor are given and the thinning and the encapsulation processes are shortly presented.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2013.2254474