A multiband 40nm CMOS LTE SAW-less modulator with −60dBc C-IM3

Due to the increasing demand for communication bandwidth combined with the scarceness of free spectrum, the complexity and versatility of 4 th -generation modulation schemes is greater than ever. In particular, the LTE standard defines multiple RF bands and groups OFDM modulated subcarriers into Res...

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Main Authors: Ingels, M., Furuta, Y., Xiaoqiang Zhang, Sungwoo Cha, Craninckx, J.
Format: Conference Proceeding
Language:English
Subjects:
Active filters
Baseband
Harmonic analysis
Mixers
Modulation
Power generation
Power harmonic filters
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creator Ingels, M.
Furuta, Y.
Xiaoqiang Zhang
Sungwoo Cha
Craninckx, J.
description Due to the increasing demand for communication bandwidth combined with the scarceness of free spectrum, the complexity and versatility of 4 th -generation modulation schemes is greater than ever. In particular, the LTE standard defines multiple RF bands and groups OFDM modulated subcarriers into Resource Blocks (RB) that can be flexibly used within the allocated channel bandwidth. When the transmitted power is concentrated in one or a few RBs, counter-intermodulation products (C-IM) may fall directly or through cross-modulation into the RX band and degrade FDD performance. They may also fall into protected bands and violate spectral emission requirements.
doi_str_mv 10.1109/ISSCC.2013.6487760
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6487760</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6487760</ieee_id><sourcerecordid>6487760</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-918a890cdf38ca7053bd9ac5f522b2e83fb0367b58fced50aba6ff53866b81e03</originalsourceid><addsrcrecordid>eNo1kD1OwzAYQM2fRFt6AVh8AYfP-eLP9kaJClRK1SFFjJWd2CIoaVGTCnEDZo7ISRgo0xue9IbH2LWEREqwt4uyzPMkBYkJZUZrghM2lhlpzJTMzCkbpahJGAI6Y1Orzb9TdM5GIC0KUgiXbNz3bwCgLJkRu5vx7tAOjXfbmmew7Xi-XJW8WM95OXsRbeh73u3qQ-uG3Z5_NMMr__n6JqjvK56LxRKv2EV0bR-mR07Y88N8nT-JYvW4yGeFaKRWg7DSOGOhqiOaymlQ6GvrKhVVmvo0GIwekLRXJlahVuC8oxgVGiJvZACcsJu_bhNC2Lzvm87tPzfHE_gLK7xL3A</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A multiband 40nm CMOS LTE SAW-less modulator with −60dBc C-IM3</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ingels, M. ; Furuta, Y. ; Xiaoqiang Zhang ; Sungwoo Cha ; Craninckx, J.</creator><creatorcontrib>Ingels, M. ; Furuta, Y. ; Xiaoqiang Zhang ; Sungwoo Cha ; Craninckx, J.</creatorcontrib><description>Due to the increasing demand for communication bandwidth combined with the scarceness of free spectrum, the complexity and versatility of 4 th -generation modulation schemes is greater than ever. In particular, the LTE standard defines multiple RF bands and groups OFDM modulated subcarriers into Resource Blocks (RB) that can be flexibly used within the allocated channel bandwidth. When the transmitted power is concentrated in one or a few RBs, counter-intermodulation products (C-IM) may fall directly or through cross-modulation into the RX band and degrade FDD performance. They may also fall into protected bands and violate spectral emission requirements.</description><identifier>ISSN: 0193-6530</identifier><identifier>ISBN: 9781467345156</identifier><identifier>ISBN: 1467345156</identifier><identifier>EISSN: 2376-8606</identifier><identifier>EISBN: 1467345148</identifier><identifier>EISBN: 9781467345149</identifier><identifier>EISBN: 9781467345163</identifier><identifier>EISBN: 1467345164</identifier><identifier>DOI: 10.1109/ISSCC.2013.6487760</identifier><language>eng</language><publisher>IEEE</publisher><subject>Active filters ; Baseband ; Harmonic analysis ; Mixers ; Modulation ; Power generation ; Power harmonic filters</subject><ispartof>2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.338-339</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6487760$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54530,54895,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6487760$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ingels, M.</creatorcontrib><creatorcontrib>Furuta, Y.</creatorcontrib><creatorcontrib>Xiaoqiang Zhang</creatorcontrib><creatorcontrib>Sungwoo Cha</creatorcontrib><creatorcontrib>Craninckx, J.</creatorcontrib><title>A multiband 40nm CMOS LTE SAW-less modulator with −60dBc C-IM3</title><title>2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers</title><addtitle>ISSCC</addtitle><description>Due to the increasing demand for communication bandwidth combined with the scarceness of free spectrum, the complexity and versatility of 4 th -generation modulation schemes is greater than ever. In particular, the LTE standard defines multiple RF bands and groups OFDM modulated subcarriers into Resource Blocks (RB) that can be flexibly used within the allocated channel bandwidth. When the transmitted power is concentrated in one or a few RBs, counter-intermodulation products (C-IM) may fall directly or through cross-modulation into the RX band and degrade FDD performance. They may also fall into protected bands and violate spectral emission requirements.</description><subject>Active filters</subject><subject>Baseband</subject><subject>Harmonic analysis</subject><subject>Mixers</subject><subject>Modulation</subject><subject>Power generation</subject><subject>Power harmonic filters</subject><issn>0193-6530</issn><issn>2376-8606</issn><isbn>9781467345156</isbn><isbn>1467345156</isbn><isbn>1467345148</isbn><isbn>9781467345149</isbn><isbn>9781467345163</isbn><isbn>1467345164</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1kD1OwzAYQM2fRFt6AVh8AYfP-eLP9kaJClRK1SFFjJWd2CIoaVGTCnEDZo7ISRgo0xue9IbH2LWEREqwt4uyzPMkBYkJZUZrghM2lhlpzJTMzCkbpahJGAI6Y1Orzb9TdM5GIC0KUgiXbNz3bwCgLJkRu5vx7tAOjXfbmmew7Xi-XJW8WM95OXsRbeh73u3qQ-uG3Z5_NMMr__n6JqjvK56LxRKv2EV0bR-mR07Y88N8nT-JYvW4yGeFaKRWg7DSOGOhqiOaymlQ6GvrKhVVmvo0GIwekLRXJlahVuC8oxgVGiJvZACcsJu_bhNC2Lzvm87tPzfHE_gLK7xL3A</recordid><startdate>201302</startdate><enddate>201302</enddate><creator>Ingels, M.</creator><creator>Furuta, Y.</creator><creator>Xiaoqiang Zhang</creator><creator>Sungwoo Cha</creator><creator>Craninckx, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201302</creationdate><title>A multiband 40nm CMOS LTE SAW-less modulator with −60dBc C-IM3</title><author>Ingels, M. ; Furuta, Y. ; Xiaoqiang Zhang ; Sungwoo Cha ; Craninckx, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-918a890cdf38ca7053bd9ac5f522b2e83fb0367b58fced50aba6ff53866b81e03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Active filters</topic><topic>Baseband</topic><topic>Harmonic analysis</topic><topic>Mixers</topic><topic>Modulation</topic><topic>Power generation</topic><topic>Power harmonic filters</topic><toplevel>online_resources</toplevel><creatorcontrib>Ingels, M.</creatorcontrib><creatorcontrib>Furuta, Y.</creatorcontrib><creatorcontrib>Xiaoqiang Zhang</creatorcontrib><creatorcontrib>Sungwoo Cha</creatorcontrib><creatorcontrib>Craninckx, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ingels, M.</au><au>Furuta, Y.</au><au>Xiaoqiang Zhang</au><au>Sungwoo Cha</au><au>Craninckx, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A multiband 40nm CMOS LTE SAW-less modulator with −60dBc C-IM3</atitle><btitle>2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers</btitle><stitle>ISSCC</stitle><date>2013-02</date><risdate>2013</risdate><spage>338</spage><epage>339</epage><pages>338-339</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>9781467345156</isbn><isbn>1467345156</isbn><eisbn>1467345148</eisbn><eisbn>9781467345149</eisbn><eisbn>9781467345163</eisbn><eisbn>1467345164</eisbn><abstract>Due to the increasing demand for communication bandwidth combined with the scarceness of free spectrum, the complexity and versatility of 4 th -generation modulation schemes is greater than ever. In particular, the LTE standard defines multiple RF bands and groups OFDM modulated subcarriers into Resource Blocks (RB) that can be flexibly used within the allocated channel bandwidth. When the transmitted power is concentrated in one or a few RBs, counter-intermodulation products (C-IM) may fall directly or through cross-modulation into the RX band and degrade FDD performance. They may also fall into protected bands and violate spectral emission requirements.</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.2013.6487760</doi><tpages>2</tpages></addata></record>
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subjects Active filters
Baseband
Harmonic analysis
Mixers
Modulation
Power generation
Power harmonic filters
title A multiband 40nm CMOS LTE SAW-less modulator with −60dBc C-IM3
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T20%3A38%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20multiband%2040nm%20CMOS%20LTE%20SAW-less%20modulator%20with%20%E2%88%9260dBc%20C-IM3&rft.btitle=2013%20IEEE%20International%20Solid-State%20Circuits%20Conference%20Digest%20of%20Technical%20Papers&rft.au=Ingels,%20M.&rft.date=2013-02&rft.spage=338&rft.epage=339&rft.pages=338-339&rft.issn=0193-6530&rft.eissn=2376-8606&rft.isbn=9781467345156&rft.isbn_list=1467345156&rft_id=info:doi/10.1109/ISSCC.2013.6487760&rft.eisbn=1467345148&rft.eisbn_list=9781467345149&rft.eisbn_list=9781467345163&rft.eisbn_list=1467345164&rft_dat=%3Cieee_6IE%3E6487760%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-918a890cdf38ca7053bd9ac5f522b2e83fb0367b58fced50aba6ff53866b81e03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6487760&rfr_iscdi=true