Investigations of hot-carrier-induced breakdown of thin oxides

New oxide breakdown modes induced by hot carrier injection are presented. By using substrate hot electron and hot hole injection techniques, we demonstrate that the oxide damaged by hot carriers shows different breakdown characteristics compared with the case of conventional FN stress experiments. T...

Full description

Saved in:
Bibliographic Details
Main Authors: Kamakura, Y., Utsunomiya, H., Tomita, T., Umeda, K., Taniguchi, K.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Charge carrier processes
Design for quality
Electric breakdown
Hot carriers
Predictive models
Stress
Substrate hot electron injection
Threshold voltage
Tunneling
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:New oxide breakdown modes induced by hot carrier injection are presented. By using substrate hot electron and hot hole injection techniques, we demonstrate that the oxide damaged by hot carriers shows different breakdown characteristics compared with the case of conventional FN stress experiments. These new experiments reveal that the lifetime of oxide breakdown is not simply determined by the total number of injected holes.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1997.649469