Transient photoconductivity measurements of amorphous semiconductors by subnanosecond nitrogen lasers

Picosecond N 2 lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast ris...

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Bibliographic Details
Published in:IEEE transactions on instrumentation and measurement 1986-09, Vol.IM-35 (3), p.354-357
Main Authors: Lue, Juh Tzeng, Tzeng, Chin-Ching
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Impedance
Laser noise
Measurement by laser beam
Photoconduction and photovoltaic effects
photodielectric effects
Photoconductivity
Physics
Semiconductor device measurement
Transient analysis
Transmission line measurements
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Summary:Picosecond N 2 lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast rise-time preamplifier designed in this work provide this system with a high immunity to the background noise during the N 2 laser discharge.
ISSN:0018-9456
1557-9662
DOI:10.1109/TIM.1986.6499224