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Transient photoconductivity measurements of amorphous semiconductors by subnanosecond nitrogen lasers

Picosecond N 2 lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast ris...

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Published in:	IEEE transactions on instrumentation and measurement 1986-09, Vol.IM-35 (3), p.354-357
Main Authors:	Lue, Juh Tzeng, Tzeng, Chin-Ching
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Impedance Laser noise Measurement by laser beam Photoconduction and photovoltaic effects photodielectric effects Photoconductivity Physics Semiconductor device measurement Transient analysis Transmission line measurements
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container_end_page	357
container_issue	3
container_start_page	354
container_title	IEEE transactions on instrumentation and measurement
container_volume	IM-35
creator	Lue, Juh Tzeng Tzeng, Chin-Ching
description	Picosecond N 2 lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast rise-time preamplifier designed in this work provide this system with a high immunity to the background noise during the N 2 laser discharge.
doi_str_mv	10.1109/TIM.1986.6499224
format	article
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language	eng
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source	IEEE Xplore (Online service)
subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Impedance Laser noise Measurement by laser beam Photoconduction and photovoltaic effects photodielectric effects Photoconductivity Physics Semiconductor device measurement Transient analysis Transmission line measurements
title	Transient photoconductivity measurements of amorphous semiconductors by subnanosecond nitrogen lasers
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