Impacts of glass carriers in temporary bonding process of 3DS-IC technology

Three-Dimensional Stacked Integrated Circuits (3DS-IC) technology is a new concept to realize circuits with many merits, e.g. high density, high speed, low power and low cost. Temporary wafer bonding for silicon (Si) wafer thinning and handling is one of the technologies to achieve 3D system integra...

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Bibliographic Details
Main Authors: Bor Kai Wang, Lu, R., Shorey, A.
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Chemicals
Glass
Recycling
Silicon
Surface treatment
Online Access:Request full text
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Summary:Three-Dimensional Stacked Integrated Circuits (3DS-IC) technology is a new concept to realize circuits with many merits, e.g. high density, high speed, low power and low cost. Temporary wafer bonding for silicon (Si) wafer thinning and handling is one of the technologies to achieve 3D system integration. In the development history of temporary bonding technology, the Si carrier is used at the beginning because of its well-known properties and convenience to access. Contrary to the single crystal Si, the versatility of glass in composition flexibility and excellent attributes begin to attract more and more interests as a supporting carrier in the temporary bonding technology as a carrier. This study presented here will discuss the importance of glass attributes through the lifetime of the wafer.
DOI:10.1109/EPTC.2012.6507152