Triple-Junction GaInP/GaAs/Ge Solar Cells With an AZO Transparent Electrode and ZnO Nanowires

In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF 2 /Ta 2 O 5...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2013-07, Vol.3 (3), p.991-996
Main Authors: Chang, Shoou-Jinn, Hou, Jei-Li, Hsueh, Ting-Jen, Lam, Kin-Tak, Li, Shuguang, Liu, Chun-Hsing, Chang, Sheng-Po
Format: Article
Language:English
Subjects:
Al-doped ZnO (AZO)
triple-junction solar cell
ZnO nanowires
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Summary:In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF 2 /Ta 2 O 5 . By inserting a 4-nm-thick AuGeNi between AZO and n + -AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10 -5 Ω·cm 2 . Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2013.2258192