GaSb-based laser monolithically grown on Si substrate operating under cw at room temperature

GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 μm lasers and their direct integration onto Si substrates.

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Bibliographic Details
Main Authors: Tournie, E., Reboul, J. R., Madiomanana, K., Cerutti, L., Rodriguez, J. B.
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 μm lasers and their direct integration onto Si substrates.
ISSN:2162-108X
2162-1098