Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier

Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a...

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Bibliographic Details
Main Authors: Kashif, A., Azam, S., Hayat, K., Imran, M.
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
Europe
Heterojunction bipolar transistors
Impedance
Integrated circuit modeling
LC network
load-pull
Power amplifier
Si-LDMOS
time-domain analysis
Online Access:Request full text
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Summary:Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Z f ) by providing a desired RF output power of 30.8 dBm.
DOI:10.1109/IBCAST.2013.6512185