Accurate equivalent circuit model of deep trench capacitors by numerical simulation and analytical calculation

This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson's solution is used, which gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias. Dependence of substr...

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Bibliographic Details
Main Authors: Fathnan, A. A., Kumar, V., Yang, S., Sheu, G.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Capacitors
Electrodes
Equivalent circuits
Integrated circuit modeling
Mathematical model
Resistance
Online Access:Request full text
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Summary:This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson's solution is used, which gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias. Dependence of substrate equivalent series resistance on current path length of top electrode to ground is also simulated. Optimum high-capacitance and low series resistance devices is proposed. Analytical results are in a good agreement with simulation results obtained by sentaurus and previous experimental data.
DOI:10.1109/ISNE.2013.6512291