Graphene-Si Schottky IR Detector

This paper reports on photodetection properties of the graphene-Si schottky junction by measuring current-voltage characteristics under 1.55-μm excitation laser. The measurements have been done on a junction fabricated by depositing mechanically exfoliated natural graphite on top of the pre-patterne...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2013-07, Vol.49 (7), p.589-594
Main Authors: Amirmazlaghani, M., Raissi, F., Habibpour, O., Vukusic, J., Stake, J.
Format: Article
Language:English
Subjects:
Detector
Detectors
Graphene
Junctions
Photonics
Schottky diode
Schottky diodes
Semiconductor lasers
Silicon
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Summary:This paper reports on photodetection properties of the graphene-Si schottky junction by measuring current-voltage characteristics under 1.55-μm excitation laser. The measurements have been done on a junction fabricated by depositing mechanically exfoliated natural graphite on top of the pre-patterned silicon substrate. The electrical Schottky barrier height is estimated to be (0.44-0.47) eV with a minimum responsivity of 2.8 mA/W corresponding to an internal quantum efficiency of 10%, which is almost an order of magnitude larger than regular Schottky junctions. A possible explanation for the large quantum efficiency related to the 2-D nature of graphene is discussed. Large quantum efficiency, room temperature IR detection, ease of fabrication along with compatibility with Si devices can open a doorway for novel graphene-based photodetectors.
ISSN:0018-9197
1558-1713
1558-1713
DOI:10.1109/JQE.2013.2261472