Photocurrent transients in amorphous chalcogenides: evidence for trap-controlled recombination

The transient photocurrents in amorphous thermally deposited AsSe, As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/:Sn films were studied in step-function mode of light excitation. The photocurrent rise and decay was found to be consistent with the model of trap-controlled non-stationary capture and recomb...

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Bibliographic Details
Main Authors: Iovu, M.S., Shutov, S.D., Arkhipov, V.I., Rebeja, S.Z., Bulgaru, M.G., Colomeyko, E.P.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Charge carrier processes
Dispersion
Energy capture
Glass
Material storage
Photoconductivity
Physics
Radiative recombination
Temperature
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Summary:The transient photocurrents in amorphous thermally deposited AsSe, As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/:Sn films were studied in step-function mode of light excitation. The photocurrent rise and decay was found to be consistent with the model of trap-controlled non-stationary capture and recombination in exponentially distributed in energy hole traps. Strong dependence of capture process on film composition was demonstrated through its influence on photocurrent transients.
DOI:10.1109/SMICND.1997.651547