Study of the near Si-SiO/sub 2/ interface trap layer using the charge pumping technique

It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as...

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Bibliographic Details
Main Authors: Maneglia, Y., Bauza, D.
Format: Conference Proceeding
Language:English
Subjects:
Charge measurement
Charge pumps
Current measurement
Density measurement
Equations
Filling
Frequency
Linear predictive coding
MOS devices
MOSFETs
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Summary:It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained.
DOI:10.1109/SMICND.1997.651565