Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typical of devices with highly doped source, is e...

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Bibliographic Details
Published in:IEEE electron device letters 2013-06, Vol.34 (6), p.726-728
Main Authors: De Michielis, L., Lattanzio, L., Moselund, K. E., Riel, H., Ionescu, A. M.
Format: Article
Language:English
Subjects:
Applied sciences
Band-to-band tunneling
Degradation
Devices
Electronics
Exact sciences and technology
low-power electronics
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
steep subthreshold swing device
Swing
Transistors
tunnel-FET
Tunneling
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Summary:In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typical of devices with highly doped source, is explained, and its relation with the high-energy source Fermi tail is carefully analyzed. Simultaneously, the poor driving capability of Tunnel-FET devices is investigated, highlighting the primary role played by the occupancy functions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2257665