Loading…

Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications

Surface-etched distributed Bragg reflector (SE-DBR) semiconductor lasers show potential for use in a variety of communications and spectroscopy applications requiring compact, single-mode, narrow linewidth, and tunable laser sources. This approach eliminates contamination issues associated with form...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2013-07, Vol.19 (4), p.1503712-1503712
Main Authors: Zimmerman, J. W., Price, R. Kirk, Reddy, U., Dias, N. L., Coleman, J. J.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Surface-etched distributed Bragg reflector (SE-DBR) semiconductor lasers show potential for use in a variety of communications and spectroscopy applications requiring compact, single-mode, narrow linewidth, and tunable laser sources. This approach eliminates contamination issues associated with forming gratings by regrowth in Al-containing structures by using a single growth step and etching the grating after the entire epitaxy is grown. This paper reviews progress in the development of SE-DBR lasers using InGaAs-GaAs-AlGaAs and GaAs-AlGaAs separate confinement heterostructure. Fabrication techniques, design optimization studies, and device performance characteristics are overviewed. Applications of SE-DBRs toward multiwavelength arrays, THz generation via optical heterodyning, and alkali spectroscopy are discussed.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2013.2260731