Loading…
Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications
Surface-etched distributed Bragg reflector (SE-DBR) semiconductor lasers show potential for use in a variety of communications and spectroscopy applications requiring compact, single-mode, narrow linewidth, and tunable laser sources. This approach eliminates contamination issues associated with form...
Saved in:
Published in: | IEEE journal of selected topics in quantum electronics 2013-07, Vol.19 (4), p.1503712-1503712 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Surface-etched distributed Bragg reflector (SE-DBR) semiconductor lasers show potential for use in a variety of communications and spectroscopy applications requiring compact, single-mode, narrow linewidth, and tunable laser sources. This approach eliminates contamination issues associated with forming gratings by regrowth in Al-containing structures by using a single growth step and etching the grating after the entire epitaxy is grown. This paper reviews progress in the development of SE-DBR lasers using InGaAs-GaAs-AlGaAs and GaAs-AlGaAs separate confinement heterostructure. Fabrication techniques, design optimization studies, and device performance characteristics are overviewed. Applications of SE-DBRs toward multiwavelength arrays, THz generation via optical heterodyning, and alkali spectroscopy are discussed. |
---|---|
ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/JSTQE.2013.2260731 |