Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis

In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with ~30 nm thick ZTO channel layer deposited at a substrate temperature of 400°C an...

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Bibliographic Details
Published in:Journal of display technology 2013-10, Vol.9 (10), p.825-831
Main Authors: Parthiban, Shanmugam, Elangovan, Elamurugu, Nayak, Pradipta K., Goncalves, Alexandra, Nunes, Daniela, Pereira, Luis, Barquinha, Pedro, Busani, Tito, Fortunato, Elvira, Martins, Rodrigo
Format: Article
Language:English
Subjects:
Coatings
Glass
Low temperature
solution process
spray coating
Substrates
Thin film transistors
thin-film transistor (TFT)
Tin
Zinc
zinc tin oxide (ZTO)
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Summary:In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with ~30 nm thick ZTO channel layer deposited at a substrate temperature of 400°C and 300°C exhibited, respectively, a saturation mobility of ~2.9 cm 2 ·V -1 ·s -1 and 1.45 cm 2 ·V -1 ·s -1 ; VON voltage of ~0.15 V, and 0.2 V; a sub-threshold swing of ~400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of ~3.5×10 5 and 6×10 3 , for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2013.2262096