A 2.535 GHz fully integrated Doherty power amplifier in CMOS 65nm with constant PAE in backoff

A fully integrated Doherty power amplifier at 2.535 GHz is presented in 65 nm CMOS technology with constant PAE over a 8.75dB backoff. The amplifier has 23.4 dBm output power and both PAE peaks have the same level in 25%. Both sub-amplifiers have a single-ended cascode topology and optimized input a...

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Bibliographic Details
Main Authors: Carneiro, M. L., Deltimple, N., Belot, D., de Carvalho, P. H. P., Kerherve, E.
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
CMOS technology
Gain
Power amplifiers
Power generation
Topology
Transistors
Online Access:Request full text
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Summary:A fully integrated Doherty power amplifier at 2.535 GHz is presented in 65 nm CMOS technology with constant PAE over a 8.75dB backoff. The amplifier has 23.4 dBm output power and both PAE peaks have the same level in 25%. Both sub-amplifiers have a single-ended cascode topology and optimized input and output networks to reduce losses and correctly balance their behavior.
DOI:10.1109/LASCAS.2013.6519031