Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode

A new Optical-High-Frequency test structure and dedicated test bench have been developed to characterize a Germanium-on-Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on-wafer extraction. Continuous wave signals have been...

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Bibliographic Details
Main Authors: Oeuvrard, S., Lampin, J., Ducournau, G., Virot, L., Fedeli, J. M., Hartmann, J. M., Danneville, F., Morandini, Y., Gloria, D.
Format: Conference Proceeding
Language:English
Subjects:
Germanium Photodiode
Noise
Noise Measurement
Noise Source
Optical coupling
Optical fibers
Photodiodes
Radio frequency
Silicon Photonics
Test Structure
Online Access:Request full text
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Description
Summary:A new Optical-High-Frequency test structure and dedicated test bench have been developed to characterize a Germanium-on-Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on-wafer extraction. Continuous wave signals have been measured from these 1550 nm photodiodes, with RF power higher than -20 dBm at 109 GHz.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2013.6528148