Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C 10 -DNTT) based test devices. This mode...

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Bibliographic Details
Main Authors: Maiti, T. K., Hayashi, T., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., Mattausch, H. J.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
compact model
Integrated circuit modeling
Logic gates
Mathematical model
Organic semiconductors
Organic Thin-Film Transistors
Semiconductor process modeling
surface potential
traps
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Summary:In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C 10 -DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2013.6528164